High second bit operation window method for virtual ground array with two-bit memory cells

ABSTRACT

A non-volatile VG memory array employing memory semiconductor cells capable of storing two bits of information having a non-conducting charge trapping dielectric, such as silicon nitride, layered in associating with at least one electrical insulating layer, such as an oxide, is disclosed. Bit lines of the memory array are capable of transmitting positive voltage to reach the source/drain regions of the memory cells of the array. A method that includes the hole injection erasure of the memory cells of the array that lowers the voltage threshold of the memory cells to a value lower than the initial voltage threshold of the cells is disclosed. The hole injection induced lower voltage threshold reduces the second bit effect such that the window of operation between the programmed and un-programmed voltage thresholds of the bits is widened. The programming and read steps reduce leakage current of the memory cells in the array.

BACKGROUND OF THE INVENTION

The present invention relates to non-volatile flash memory (“NVM”)semiconductor device which is able to continually store information evenwhen the supply of electricity is removed from the device containing theNVM cell. More particularly, the invention relates to a NVMsemiconductor device having two-bits per cell employed in a virtualground (VG) array. Also, the invention relates to a method forprogramming the two-bits per cell NVM semiconductor in the VG array.This innovation provides for a more capable VG array due to the doubledmemory density per cell, which is also known as multi-level flashmemory. The invention also impacts an NVM semiconductor device “windowof operation” that permits more effective use of two-bits per cell NVMsemiconductor devices. The invention also addresses the leakage currentissue experienced with VG arrays when some erasing, programming, andreading methods are applied.

Multi-level, or multi-bit, flash memory cells provide a solution forincreasing the amount of data that can be stored on a memory devicewithout consuming more space. Whereas a single-bit cell can store onlytwo states, “on” and “off” (typically labeled “0” and “1”), a cellhaving n bits and using binary encoding is capable of storing up 2nstates. Thus, a two-bit cell may store data in four discrete states,“00”, “01”, “10” and “11” which is distinctly more efficient that the“0” or “1” state alone. FIG. 1A shows a typical two-bit cell, generallylabeled 10. The cell 10 has symmetrical source/drain regions 14 and 16in connection with a semiconductor well 30. The well 30 and a gate 26are separated from a charge trapping layer 20 by an oxide region 18. Inthis configuration, as seen in FIG. 1F, the left side of the chargetrapping layer 20 is designated as the “left bit” or Bit-L 34, and theright side as the “right bit” or Bit-R 36.

A limitation with two-bits per cell NVM semiconductor devices is anarrow “window of operation” that exists after the conventionalprogramming of a two-bit cell. The window of operation is generallydescribed as the difference in the threshold voltage (Vt) of aprogrammed cell bit as compared to the Vt of the un-programmed (erased)state. FIG. 1G illustrates the distribution of the un-programmed Vt ofthe right bit 36 of FIG. 1H as well as the distribution of theprogrammed Vt of the right bit 36 of FIG. 1H. As FIG. 1G indicates, thewindow of operation of 4V in this example is that difference between thehighest Vt of the un-programmed state 1 and the lowest Vt of theprogrammed state 0. As a cell bit is programmed from an un-programmedstate (a logic 1) to a programmed state (a logic 0) the thresholdvoltage increases for that bit. Voltage thresholds and techniques forprogramming the left and right bits of NVM semiconductors are discussedin U.S. Pat. No. 6,011,725 (Eitan '725), the contents of which isincorporated by reference herein.

The greater the difference in the un-programmed Vt from the programmedVt allows for a clearer distinction between the programmed andun-programmed cell states for one-bit cells or to describe the state ofthe right bit and/or the left bit for two-bit cells. A greaterdifference between Vt of the two bits in a two-bit cell also allows fora clearer discrimination among the four distinct programmed cell statesreferred to above. Greater differences between the programmed andun-programmed state Vt, in other words a larger operational window, canbe accomplished by programming from a lower initial voltage thresholdVti. The lower the Vti, then the greater discrimination that will existbetween the un-programmed state and the programmed state. Memory cellswith a larger operation window have the advantage of tolerating morecharge loss and read disturb and such cells have greater endurance,which refers to the cycling of the program and erase steps.

As indicated in FIG. 1G, the window of operation is also known as thesecond bit window of operation regarding a two-bit memory cell. Thesecond bit window of operation is generally described as the effect onthe Vt of one bit that is not undergoing a programming action by theprogramming of the other bit associated with the same cell (the targetbit). In other words, as seen in FIGS. 2A and 2B, as the left bit isprogrammed from its initial state with Vti to its programmed state witha programmed Vt, the Vt of the right bit undergoes a “shift” in thatalthough it is not being programmed, the right bit Vt is adjusted higheranyway and thus has a higher Vt for the same bit state that existedbefore the left bit was programmed. As FIGS. 3A and 3B indicate, thelower the initial Vt (Vti) of both the bit to be programmed (the targetbit of the target cell) and the non-programmed bit (non-target bit ofthe target cell), then the lower Vt shift for the non-programmed bitwill be induced as the programmed bit undergoes a larger Vt shift forprogramming purposes. As seen in FIG. 3A, the erasure method of thepresent invention provides an erased Vt that is lower than the Vti ofthe memory cell 10.

When subjected to a conventional erase, program, and read operation thenon-targeted NVM cells of the VG array will experience leakage currentflow. FIG. 2C illustrates the leakage current flow exhibited by NVMcells of a VG array that are not targeted during a conventionalprogramming step of a target NVM cell or cells.

Programming (i.e. charge injection) in two-bit NVM cells is achieved byvarious conventional hot carrier injection methods such as channel hotelectron injection (CHE), source side injection (SSI) or channelinitiated secondary electron (CHISEL).

It is desirable to begin programming of two-bit memory cells in a VGarray with a lower initial Vt (Vti) so that there will be a larger widowbetween the Vt of the programmed state and Vt of the non-programmedstate in that there is a smaller Vt shift imposed on the non-programmedbit as the other, target bit, is programmed. It is also desirable toconduct an erase, program, and read operation on a VG array with two-bitNVM cells and limit the leakage current from non-targeted cells in thearray.

BRIEF SUMMARY OF THE INVENTION

The present invention relates to non-volatile memory (“NVM”)semiconductor devices that implement multiple bit programming,specifically two-bits per cell, and the application of the two-bit NVMcell to a virtual ground (VG) array. Further, this invention relates toa method for reducing the second bit effect on the two-bit NVM cell andthereby increase the window of operation of the two-bit cell.

The method of the present invention, dubbed the “Turn-On-Mode”operation, increases the second bit window of operation of the two-bitcell NVM by lowering the initial voltage threshold (Vti) of both theleft and right bits so that the effect of programming one of the left orright bits (the target bit) on the Vt of the non-target bit is lowerthan if the Vti of both bits was at a higher level.

The first step of the Turn-On-Mode operation is to erase all the two-bitNVM cells in the array via a hole injection erase in which referencevoltage is applied to the source/drain regions and the substrate of thememory cells while a positive bias voltage is applied to the NVM cellgate. Holes are thereby injected into the trapping layer of thesemiconductor and thereby inducing a channel in the substrate betweenthe two source/drain regions. The trapped hole charge will also lowerthe Vt of the cell for both the left and right bits. This provides theadvantage of turning on the memory cell with a negligible voltage ormere reference voltage applied to the gate.

The second step of the Turn-On-Mode operation is to program the rightand then the left bits, or vice versa. Conventional programming methodssuch as Channel Hot Electron (CHE) programming can be used for this stepof the Turn-On-Mode operation. Programming voltages are applied to thetarget source/drain region or regions via the bit lines disposedparallel on both sides of the targeted NVM cell of the VG array. It isimportant to note that technically, a programming voltage close to thatof a reference voltage can be considered to be a programming voltage inthat the bit associated with the source/drain to which it is applied isbeing written to a logic 1 state. However, as a logic 1 state isgenerally considered to be an un-programmed state, for purposes of thisinvention, programming will be considered to be the operation of writinga bit to a logic 0 state. A programming voltage is also applied to thegate or gates of the target NVM cells via the word line associated withthe target cell(s). Intermediate word lines have a bias voltage appliedto turn off the memory cells associated with the intermediate wordlines.

The last step in the Turn-On-Mode operation is the read step wherein thestate of the right and left bits of the target memory cell(s) are readto ascertain their state as either programmed or un-programmed. In thecell or cells to be read, read voltages are applied to the source/drainregion opposite that source/drain region associated with the bit to beread. In other words, to read the left bit of a cell or cells, a readvoltage is applied to the source/drain associated with right bit of thecell. These read voltages are applied via the bit lines to the right andleft bit source/drain regions respectively. The gates of the cells to beread have a read voltage applied via the associated word line. The readvoltage is a magnitude between the cell's erased Vt and the cellprogrammed Vt. Intermediate word lines are biased to the extent that thecells associated with the word line are turned off.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The foregoing summary, as well as the following detailed description ofthe invention, will be better understood when read in conjunction withthe appended drawings. For the purpose of illustrating the invention,there are shown in the drawings embodiments which are presentlypreferred. It should be understood, however, that the invention is notlimited to the precise arrangements and instrumentalities shown. In thedrawings:

FIG. 1A is a partial sectional side elevation view of a conventionalnon-volatile memory (NVM) in accordance with the preferred embodiment ofthe present invention;

FIG. 1B is a partial sectional side elevation view of FIG. 1Ademonstrating an erasing method in accordance with the preferredembodiments of the present invention;

FIG. 1C is a partial sectional side view of an NVM cell of a differentconfiguration demonstrating an erasing method in accordance with thepreferred embodiments of the present invention;

FIG. 1D is a partial sectional side view of an NVM cell of a differentconfiguration demonstrating an erasing method in accordance with thepreferred embodiments of the present invention;

FIG. 1E is a partial sectional side elevation view of a conventionalnon-volatile memory (NVM) cell of FIG. 1A undergoing conventionalchannel hot electron (CHE) programming of the right bit (Bit-R) of thecell;

FIG. 1F is a partial sectional side elevation view of a conventionalnon-volatile memory (NVM) cell of FIG. 1E, with an already programmedright bit (Bit-R), undergoing conventional channel hot electron (CHE)programming of the left bit (Bit-L);

FIG. 1G is an illustration of the second bit window of operation as onebit in a two-bit NMV cell of FIG. 1A transitions from an un-programmedstate to a programmed state;

FIG. 1H is a partial sectional side elevation view of a two-bit NVM cellin which the left bit is programmed and the right bit is un-programmed;

FIG. 2A is a partial sectional side elevation view of the NVM of FIG. 1Ademonstrating conventional channel hot electron injection (CHE)programming of the cell's left bit (Bit-L);

FIG. 2B is a graphical illustration of the second bit effect asdemonstrated by the change of the voltage threshold (Vt) of Bit-R whileBit-L is programmed with a conventional programming method;

FIG. 2C is a schematic illustration of the leakage current that occursin a VG array when a memory cell like the one shown in FIG. 1 isprogrammed conventionally;

FIG. 2D is a schematic illustration of the impact on leakage current ina VG array when a memory cell like the one shown in FIG. 1 undergoes aprogramming step in accordance with a preferred embodiment of theinvention;

FIG. 3A is a graphical illustration of the resulting voltage thresholdof both Bit-R and Bit-L of the NVM of FIG. 1B after the cell is erasedin accordance with a preferred embodiment of the invention and after itis programmed with a conventional method;

FIG. 3B is a graphical illustration of the resulting Bit-R shift ascompared to the Bit-L shift when the NVM of FIG. 1B is erased inaccordance with a preferred embodiment of the invention and after it isprogrammed with a conventional method;

FIG. 4 is a schematic diagram of a VG array having two-bits per cell NVMnitride trap memory like the NVM of FIG. 1;

FIG. 5A is a schematic diagram of the two-bit NVM VG array of FIG. 4demonstrating the “Turn-On-Mode” memory erasure method in accordancewith the preferred embodiments of the present invention;

FIG. 5B is a partial sectional side elevation view of a NVM cell likethat in FIG. 1, before undergoing hole injection erasure, where the cellis in the “off” state with no gate bias potential applied;

FIG. 5C is a partial sectional side elevation view of a NVM cell likethat in FIG. 1, after undergoing hole injection erasure, where the cellis in the “on” state with no gate bias potential applied;

FIG. 6 is a schematic diagram of the two-bit NVM VG array of FIG. 5Ademonstrating the “Turn-On-Mode” programming of a first bit (Bit-R) ofparticular NVM cells;

FIG. 7 is a schematic diagram of the two-bit NVM VG array of FIG. 5Ademonstrating the “Turn-On-Mode” programming of a second bit (Bit-L) ofparticular NVM cells;

FIG. 8 is a schematic diagram of the two-bit NVM VG array of FIG. 5Ademonstrating the “Turn-On-Mode” reading of a second bit (Bit-L or leftbit) of particular NVM cells;

FIG. 9 is a schematic diagram of the two-bit NVM VG array of FIG. 5Ademonstrating the “Turn-On-Mode” reading of a first bit (Bit-R or rightbit) of particular NVM cells.

DETAILED DESCRIPTION OF THE INVENTION

Certain terminology is used in the following description for convenienceonly and is not limiting. The words “right”, “left”, “lower”, and“upper” designate directions in the drawings to which reference is made.The words “inwardly” and “outwardly” refer to directions toward and awayfrom, respectively, the geometric center of the object described anddesignated parts thereof. Their terminology includes the words abovespecifically mentioned, derivatives thereof and words of similar import.Additionally, the word “a” and the word “an”, as used in the claims andin the corresponding portions of the specification, means “at leastone.”

As used herein, reference to conductivity will be limited to theembodiment described. However, those skilled in the art know that p-typeconductivity can be switched with n-type conductivity and the devicewould still be functionally correct (i.e., a first or secondconductivity type). Therefore, where used herein, the reference to n orp can also mean either n or p and or p and n can be substitutedtherefore.

Furthermore, n+ and p+ refer to heavily doped n and p regions,respectively; n++ and p++ refer to very heavily doped n and p regions,respectively; n− and p− refer to lightly doped n and p regions,respectively; and n−− and p−− refer to lightly doped n and p regions,respectively. However, such relative doping terms should not beconstrued as limiting.

Referring to the drawings in detail, wherein like reference numeralsindicate like elements throughout, there is shown in FIGS. 1A-1H and 4-9a non volatile memory (NVM) cell 10 and array 80, where indicated, inaccordance with a preferred embodiment of the present invention.

FIG. 1A is a partial sectional side elevational view of a conventionalnon-volatile memory (NVM) cell 10 in accordance with the preferredembodiment of the present invention having a well/substrate 12, a firstsource/drain layer 14, a second source/drain layer 16, an oxide layer18, and nitride charge trapping layer 20, and a gate layer 26. The NVMcell 10 also has a substrate main surface 28.

The gate layer 26 may be composed of the p-polysilicon doped material asshown or the gate layer may be made from n-doped polysilicon material orit could be a metal. A NVM cell such as 10 will at any given time have athreshold voltage Vt such that the Vt is that voltage, applied to thegate of the cell, at which the NVM cell conducts current from a firstsource/drain region to the second source/drain region. Programming theright or left bit of an NVM cell from a 1,1 (Bit-L and Bit-R bothun-programmed) state to a 0,1 (Bit-L programmed and Bit-R un-programmed)or 1,0 (Bit-L un-programmed and Bit-R programmed) or 0,0 (Bit-L andBit-R both programmed) state causes the Vt of the NVM to increase.

FIG. 1B is a partial sectional side elevation view of the NVM cell 10 ofFIG. 1A demonstrating an erasing method in accordance with the preferredembodiments of the present invention. As seen in FIG. 1B, holes can beinduced to flow from the gate layer 26 into the nitride layer 20 byapplication of a gate voltage bias of 14-20 volts direct current and theapplication of a reference voltage to the first and second source/drainregions and to the well/substrate region. This form of NVM cell erasure,called Hole Injection Erasure, when applied to an initial cell willlower the cell's initial Vt, conventionally referred to as Vti, to areduced level and likely into a negative region. This reduced Vt,precedent to a bit being programmed, provides for a lower Vt shift fromun-programmed state to a programmed state that is desired to lower thesecond bit effect on the Vt of the un-programmed bit. Further, if thiserase method is applied to a previously programmed cell, the same erasemethod is applied to reduce the voltage threshold, Vt, to generally thesame negative region as that of the initial cell.

The result of the hole injection erasure on the Vt of the NVM cell 10can be seen graphically on FIG. 3A. As FIG. 3A shows, the erased Vt ofthe memory cell will be lower than the initial Vt of the cell (Vti). Asseen in FIG. 3B, with a lower Vt, the second bit effect of theprogramming of the Bit-L 34 on the Vt of Bit-R (the non-target bit) willbe nominal. In the example of FIG. 3B, a 6 volt programming shift in theVt of Bit-L 34 (from −2 volts to 4 volts) results in only a 1.5Vnon-programming shift in the Vt of Bit-R 36 (from −2.5 volts to −1.0volts). The difference in the Vt shifts of both bits being a 4.5 voltsecond bit window of operation.

FIG. 1C demonstrates the erasing method in accordance with the presentinvention on a NVM cell 10 with an additional oxide layer 22 locatedbeneath the gate layer 26 and above the nitride trapping layer 20, hencereferred to as the top oxide layer. This additional oxide layer 22 isoptimum, meaning that the thickness of the layer will allow hole chargetunneling and is less than or equal to 30 Angstroms. Thus, applicationof a gate bias voltage of 14-20 volts direct current and the applicationof a reference voltage to the first and second source/drain regions 14and 16 and the well/substrate region 12 will result in identical erasureof the NVM cell 10 as discussed in reference to FIG. 1B.

FIG. 1D demonstrates the erasing method in accordance with the presentinvention on an NVM cell 10 with an additional oxide layer 24 locatedbeneath the nitride trapping layer 20 and above the well/substrateregion 12, hence referred to as the bottom oxide layer. The first oxidelayer 18 is located beneath the gate 26 and above the nitride trappingregion 20 in this configuration. This additional oxide layer 24 isoptimum and thus, application of a gate bias voltage of −14 to −20 voltsdirect current and the application of a reference voltage to the firstand second source/drain regions 16 and 18 and the well/substrate region12 will result in identical erasure of the NVM cell 10 as discussed inreference to FIG. 1B, albeit with the holes conducted from thewell/substrate region 12 through the bottom oxide layer 24 into thenitride trapping layer 20.

FIG. 1E is a partial sectional side elevation view of a conventionalnon-volatile memory (NVM) cell 10 undergoing conventional channel hotelectron (CHE) programming of the right bit 36 (Bit-R) of the cell. Byprogramming the cell's Bit-R 36, the Vt of the cell's Bit-R 36 increasesfrom the TOM erased Vt to a programmed Vt, a higher Vt, but not has highof a Vt as would occur if the cell had not first been erased to a lowVt, or Vt<Vti, in the step illustrated in FIG. 1B. In other words,without the TOM erase step, the higher the Vt of the programmed targetbit (Bit-R), the larger the second bit effect would be on the non-targetbit's (Bit-L) Vt.

FIG. 1F is a partial sectional side elevation view of a conventionalnon-volatile memory (NVM) cell 10 undergoing conventional channel hotelectron (CHE) programming of the left bit 34 (Bit-L) of the cell. Byprogramming the cell's Bit-L 34, the Vt of the cell's Bit-L 34 increasesfrom the TOM erased Vt to a programmed Vt, a higher Vt. A larger secondbit effect would occur if the cell had not first been erased to a lowVt, Vt<Vti, in the step illustrated in FIG. 1B.

Typically, NVM cells are employed in great numbers in memory arrays suchas a virtual ground (VG) array. FIG. 4 is a schematic diagram of a VGarray 80 having two-bits per cell NVM memory 10 (typical). This VG array80 employs a plurality of word lines WL1-WL3 and bit lines BL1-BL4 inthe architecture that allows for the selection of individual two-bitcells 10 (typical) that make up the array 80. Cell selection is made byactivating the appropriate bit lines BL1-BL4 associated with the targetcell by applying voltage to the bit lines that conduct voltage to thesource/drain regions of the two-bit memory cells 10. A word line WL1-WL3is “turned-on” by applying a voltage to the word line WL1-WL3 thatinduces the NVM cells 10 associated with the word line to turn on. Therespective word lines WL1-WL3 are disposed on top of the NVM cells 10.The bit line BL1-BL4 regions are n-doped.

The VG array of FIG. 4 employs two-bit NVM cells 10 like those of FIG.1A, 1C, or 1D. In FIG. 4, the array 80 has a semiconductor substrate 12having a first main surface 28. The NVM array 80 includes a first sourcedrain region 14 and a portion of the semiconductor substrate 12proximate the first main surface 28, and a second source drain region 16and a portion of the semiconductor substrate 12 proximate the first mainsurface 28. The first source drain region 14 is spaced apart from thesecond source drain region 16. A well region 30 is disposed and aportion of the semiconductor substrate 12 proximate the first mainsurface 28 between the first source drain region 14 and the secondsource drain region 16. The NVM array 80 further includes a plurality ofmemory cells 10 disposed on the first main surface 28 of the substrate12 above the well region 30 and between the first source drain region 14and the second source drain region 16. Each memory cell 10 includes anoxide layer 18 formed on the first main surface 28 of the substrate 30,a charged storage layer 20 disposed above at least one oxide layer 18relative to the first main surface 28 of the semi conductor substrate30, a plurality of word lines WL1-WL3 that are disposed above the chargestorage layer 20 relative to the first main surface 28 and a pluralityof bit lines BL1-BL4 disposed parallel on either side of NVM cells 10.The oxide layer 18 is disposed in a portion of the first main surface 28proximate the well region 30. The bit lines BL1-BL4 are disposedperpendicular to the word lines WL1-WL3. The bit lines BL1-BL4 are inelectrical communication with the first and second source drain regions14, 16 of the plurality of memory cells 10.

The charge storage layer 20 may be formed of a silicon nitride material.Further, referring to FIG. 1D and FIG. 4, the memory cell 10 maycomprise a second oxide layer 22 or 24 disposed on the opposite side ofthe charge storage layer 20 as that of the first oxide layer 18 relativeto the main surface 28 of the semiconductor substrate 12. The pluralityof word lines WL1-WL3 are disposed above the second oxide layer 22 or 24relative to the main surface 28 of the semiconductor substrate 12. Theword lines WL1-WL3 can be formed from doped poly silicon or metal.

FIG. 5A illustrates a method of erasing non volatile memory cells 10 ina memory array 80. The erasure step is the first step in what is calledthe “Turn-On-Mode” that incorporates the hole injection erasure ofmemory cell 10, programming of the bits 34 and 36 of memory cell 10, andthen reading the program state of the bits 34 and 36 of memory cell 10.The memory array 80 includes a semiconductor substrate 12, a firstsource drain 14, a second source drain 16, a well region 30 between thefirst source drain 14 and the second source drain 16. The memory array80 further includes a plurality of memory cells 10 disposed on thesemiconductor substrate 12 between the first source drain 14 and thesecond source drain 16. The memory array 80 also includes word linesWL1-WL3 associated with respective memory cells 10 and bit lines BL1-BL4that are in electrical communication with the first and second sourcedrain regions 14, 16 of memory cells 10. Each memory cell 10 includes atleast one oxide layer 18 located above the well region 30 and a chargestorage layer 20 located above the oxide layer 18. To erase the memorycells 10 a reference voltage is applied to the well region 30 of thememory cells 10, an erasing voltage is applied to the word lines WL1-WL3and a reference voltage is applied to the bit lines BL1-BL4.

In FIG. 5B, a two-bit NVM cell 10, before the hole injection erase, isin an “off” state while the cell gate 26 is biased with a relatively lowor a reference voltage. FIG. 5C shows the cell 10 of FIG. 5B after thetwo-bit NVM cell 10 has undergone hole injection erase. The two-bit NVMcell after hole injection erase has an induced channel 32 with the samerelatively low or reference voltage applied to the gate 26. This inducedchannel 32 results in the two-bit cell 10 being in the “on” state withno additional bias voltage on the gate 26. After the hole injectionerasure, the Vt of the memory cell 10 is lower than the Vti of thememory cell prior to erasure. This imparts the advantage described inrelation to FIGS. 3A and 3B in that the second bit effect will belessened and thereby widen the window of operation.

Referring once again to the VG memory array 80 of FIG. 5A, in apreferred embodiment the erasing voltage applied to word lines WL1-WL3during the erase method is typically 14-18 volts direct current. In apreferred embodiment the erasing voltage is 14-20 volts direct current.

A method of programming a nonvolatile memory cell 10 in a memory array80, the second step of the “Turn-On-Mode”, is illustrated in FIG. 6. InFIG. 6 the memory array 80 is structured identically to that asdescribed in the erasing method. FIG. 6 demonstrates the programming ofthe right bit 36 of one memory cell 10 in array 80 to zero state orprogrammed state. This is accomplished by applying a reference voltageto the well region 30 and further applying a programming voltage to theword line WL2 associated with the memory cell 10 to be programmed. Alsoa word line deactivation voltage is applied to the word lines WL1 andWL3 in array 80 not associated with the memory cell 10 to be programmed.Further a cell bit programming voltage is applied to the bit line BL2associated with the selected first or second source drain region 14, 16of the memory cell 10 to be programmed, here the right bit 36. The cellbit programming voltage must be sufficient to cause electron tunnelingfrom the unselected first or second source drain region 14, 16 throughthe well region 30 toward the charged storage layer 20 to program a bitassociated with the selected first or second source drain region 14, 16,here the right bit 36. Also a reference voltage is applied to the bitline BL1 associated with the non-selected first or second source drainregion 14, 16 of the memory cell 10 to be programmed, here the left bit34. The remaining bit lines BL3-BL4 are left to float.

The programming voltage of the word line WL2 associated with the memorycell 10 to be programmed is typically between 6-10 volts direct current.In a preferred embodiment, the programming voltage is 8 volts directcurrent. The word line deactivation voltage for the programming methodis less than the un-programmed (erased) threshold voltage of the cells10 associated with the word line that is to be deactivated. In apreferred embodiment the deactivation voltage is −5 volts directcurrent.

FIG. 7 illustrates the programming method described in relation to FIG.6 adapted to program the bit of memory cell 10 that was leftun-programmed (or programmed in the “1” state), here the left bit 34. Asseen in FIG. 7, the formerly un-programmed bit of the target memory cell10 is programmed by changing the associated bit line voltage of thefirst or second source drain region 14, 16 associated with the bit to beprogrammed, BL1, from a reference voltage to a cell bit programmingvoltage. The voltage applied to the bit line BL2 associated with the bitthat was programmed in FIG. 6 (the right bit 36) is changed from a cellbit programming voltage to a reference voltage. The remainder of theprogramming step is the same as described with reference to FIG. 6.

FIG. 2D illustrates the advantage of the TOM of the invention as appliedto the VG array 80 with regard to leakage current. As seen in FIG. 2D,with the word lines WL1 and WL3 deactivated with −5 volts direct currentapplied and with bit lines BL3-BL4 left to float, the leakage current asexperienced with the conventional TOM programming step of FIG. 2C is notexperienced with the TOM programming step of this invention.

FIG. 8 illustrates the method of reading the left bit 34 (bit-L) ofmemory cells 10 in memory array 80, the last step of the “Turn-On-Mode”operation. Both the memory cell 10 and memory array 80 are structured asdescribed in association with the erasing method and the programmingmethod. Bit-L 34 is read by applying a reference voltage to the wellregion 30 of memory cells 10 to be read. Further, a read voltage isapplied to the word line WL2 associated with the memory cells 10 to beread and a word line deactivation voltage is applied to the word linesWL1 and WL3 not associated with the memory cell 10 to be read.Additionally, a cell bit read voltage is applied to the bit line BL2associated with the non-selected first or second source drain regions14, 16 of the memory cells 10 to be read, here the source/drain regionassociated with the right bit 36. Also, a reference voltage is appliedto the BL1 associated with the selected first or second source drainregions 14, 16 of memory cell 10 to be read, here the source/drainregion of the left bit 34. The remaining bit lines BL3-BL4 are left tofloat. This TOM read process also reduces leakage current.

The read voltage applied to the word line WL2 in order to read thememory cells 10 associated with that word line WL2 is between the erasedthreshold voltage level (Vt) and the programmed voltage threshold (Vt)of the memory cells 10 associated with word line WL2. The word linedeactivation voltage applied to the word lines WL1 and WL3 notassociated with memory cells 10 to be read is less than the erasedvoltage threshold (Vt) state. The cell bit read voltage of the readingmethod described above is typically between 1-3 volts direct current. Ina preferred embodiment the cell bit read voltage is 1.6 volts directcurrent.

FIG. 9 illustrates the reading method described in association with FIG.8 applied in a manner to read the right bit 36 (bit-R) of memory cells10 of the VG memory array 80. Similar to the procedure to read Bit-L 34discussed in relation to FIG. 8, to read Bit-R 36 of memory cells 10associated with the selected word line WL2, the cell bit read voltage isapplied to the bit lines BL1 associated with the non-selected first orsecond source drain regions 14, 16 of memory cell 10 to be read, herethe source/drain region associated with the left bit 34. Also, areference voltage is applied to the BL2 associated with the selectedfirst or second source drain regions 14, 16 of memory cell 10 to beread, here the source/drain region of the right bit 36. The rest of thereading operation is the same as described with reference to FIG. 8, thereading of the Bit-L 34.

It will be appreciated by those skilled in the art that changes could bemade to the embodiments described above without departing from the broadinventive concept thereof. It is understood, therefore, that thisinvention is not limited to the particular embodiments disclosed, but itis intended to cover modifications within the spirit and scope of thepresent invention as defined by the appended claims.

1. A method of erasing non-volatile memory cells in a memory array, thememory array comprising: a semiconductor substrate; a well region in thesubstrate; a plurality of memory cells disposed on the semiconductorsubstrate, wherein each memory cell includes a source, a drain, and acharge storage layer above the well region; a plurality of word linesassociated with respective ones of the plurality of memory cells; and aplurality of bit lines that are in electrical communication with thesource/drains of said memory cells; and the method comprising: applyinga reference voltage to the well region of the plurality of memory cells,applying an erasing voltage to the plurality of word lines and applyinga reference voltage to the plurality of said bit lines, such that holesare injected in the charge storage layer of each memory cell.
 2. Themethod of erasing non-volatile memory cells in a memory array of claim1, wherein the erasing voltage of the plurality of word lines is 14-20volts direct current to cause holes injecting from the word line to thecharge storage layer.
 3. The method of erasing non-volatile memory cellsin a memory array of claim 1, wherein the plurality of memory cellsfurther includes at least one tunneling top oxide layer disposed abovethe charge storage layer.
 4. The method of erasing non-volatile memorycells in a memory array of claim 1, wherein the plurality of memorycells further includes at least one tunneling bottom oxide layerdisposed below the charge storage layer.
 5. The method of claim 4,wherein the erasing voltage is −14 to −20 volts direct current to causeholes injecting from the well region to the charge storage layer.
 6. Amethod of erasing non-volatile memory cells in a memory array, thememory array comprising: a semiconductor substrate; a well region in thesubstrate; a plurality of memory cells disposed on the semiconductorsubstrate, wherein each memory cell includes a source, a drain, at leastone oxide layer above the well region, and a charge storage layer abovethe at least one oxide layer; a plurality of word lines associated withrespective ones of the plurality of memory cells; and a plurality of bitlines that are in electrical communication with the source/drains ofsaid memory cells; the method comprising: applying a reference voltageto the well region of the plurality of memory cells, applying an erasingvoltage to the plurality of word lines and applying a reference voltageto the plurality of said bit lines, such that holes are injected in thecharge storage layer of each memory cell, the method further comprisinga programming method, and the programming method including: applying areference voltage to the well region; applying a programming voltage tothe word line associated with the memory cell to be programmed; applyinga word line deactivation voltage to the word lines in the array notassociated with the memory cell to be programmed; applying a cell bitprogramming voltage to the end of the bit line associated with theselected first or second source/drain region of the memory cell to beprogrammed, the cell bit programming voltage being sufficient to causeelectron tunneling from the unselected first or second source/drainregion through the well region toward the storage nitride region toprogram a bit associated with the selected first or second source drainregion; applying a reference voltage to the end of the bit lineassociated with the non-selected first or second source drain region ofthe memory cell to be programmed; and allowing all remaining bit linesto float electrically.
 7. The method of programming of claim 6, whereinthe programming voltage of the word line is between 6-10 volts directcurrent.
 8. The method of programming of claim 6, wherein the word linedeactivation voltage is between −3 to −6 volts direct current.
 9. Themethod of programming of claim 6, wherein the cell bit programmingvoltage is between 4-6 volts direct current.
 10. A method of claim 6further comprising a reading method, the method including: applying areference voltage to the well region; applying a read voltage to theword line associated with the memory cell to be read; applying a wordline deactivation voltage to the word lines in the array not associatedwith the memory cell to be read; applying a cell bit read voltage to theend of the bit line associated with the non-selected first or secondsource/drain region of the memory cell to be read; applying a referencevoltage to the end of the bit line associated with the selected first orsecond source drain region of the memory cell to be read; and allowingall remaining bit lines to float electrically.
 11. The method of readingof claim 10, wherein the word line read voltage is between −3 to +6volts direct current.
 12. The method of reading of claim 10, wherein theword line deactivation voltage is between −3 to −6 volts direct current.13. The method of reading of claim 10, wherein the cell bit read voltageis between 1-2 volts direct current.